-40%
ST MICRO STD60NF55L-1 Power Field-Effect Transistor 60A 55V TO-251 *NEW* Qty.10
$ 3.16
- Description
- Size Guide
Description
*** NEW & ORIGINAL *** 10 PiecesMfr Package Description
ROHS COMPLIANT, IPAK-3
REACH Compliant
Yes
EU RoHS Compliant
Yes
Status
In Stock
Avalanche Energy Rating (Eas)
400.0 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID)
60.0 A
Drain Current-Max (ID)
60.0 A
Drain-source On Resistance-Max
0.017 ohm
DS Breakdown Voltage-Min
55.0 V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-251
JESD-30 Code
R-PSIP-T3
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1.0
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175.0 Cel
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
IN-LINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
110.0 W
Pulsed Drain Current-Max (IDM)
240.0 A
Qualification Status
Not Qualified
Sub Category
FET General Purpose Power
Surface Mount
NO
Terminal Finish
Matte Tin (Sn)
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Additional Feature
LOW THRESHOLD