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HARRIS BUZ11 N-CH Enhancement-Mode Power Field-Effect Transistor 30A 50V Qty.10
HARRIS BUZ11 N-CH Enhancement-Mode Power Field-Effect Transistor 30A 50V Qty.10

HARRIS BUZ11 N-CH Enhancement-Mode Power Field-Effect Transistor 30A 50V Qty.10

$ 4.72

Availability: 11 in stock
  • Return shipping will be paid by: Buyer
  • Brand: Harris
  • Condition: FROM MFG TUBE
  • Item must be returned within: 30 Days
  • Refund will be given as: Money Back
  • All returns accepted: Returns Accepted
  • Model: BUZ11
  • Restocking Fee: No
  • Country/Region of Manufacture: Unknown
  • MPN: BUZ11

    Description

    *** NEW & ORIGINAL ***  10 Pieces
    Part #:
    BUZ11
    Part Category:
    Transistors
    Manufacturer:
    Harris Corporation
    Description:
    30 A, 50 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
    Status
    In Stock
    Case Connection
    DRAIN
    Configuration
    SINGLE WITH BUILT-IN DIODE
    Drain Current-Max (Abs) (ID)
    30 A
    Drain Current-Max (ID)
    30 A
    Drain-source On Resistance-Max
    0.0400 ohm
    DS Breakdown Voltage-Min
    50 V
    Feedback Cap-Max (Crss)
    400 pF
    FET Technology
    METAL-OXIDE SEMICONDUCTOR
    JEDEC-95 Code
    TO-220AB
    JESD-30 Code
    R-PSFM-T3
    JESD-609 Code
    e0
    Moisture Sensitivity Level
    NOT SPECIFIED
    Number of Elements
    1
    Number of Terminals
    3
    Operating Mode
    ENHANCEMENT MODE
    Operating Temperature-Max
    150 Cel
    Package Body Material
    PLASTIC/EPOXY
    Package Shape
    RECTANGULAR
    Package Style
    FLANGE MOUNT
    Peak Reflow Temperature (Cel)
    NOT SPECIFIED
    Polarity/Channel Type
    N-CHANNEL
    Power Dissipation Ambient-Max
    75 W
    Power Dissipation-Max (Abs)
    75 W
    Pulsed Drain Current-Max (IDM)
    120 A
    Qualification Status
    COMMERCIAL
    Sub Category
    FET General Purpose Power
    Surface Mount
    NO
    Terminal Finish
    TIN LEAD
    Terminal Form
    THROUGH-HOLE
    Terminal Position
    SINGLE
    Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
    Transistor Application
    SWITCHING
    Transistor Element Material
    SILICON
    Turn-off Time-Max (toff)
    400 ns
    Turn-on Time-Max (ton)
    155 ns