50x P416B /2SA279, 2N384/NEW/ PNP h21e 50-200 Germanium transistor. USSR.

Description

1LOT - 50PCS
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Transistors P416B germanium alloy p-n-p universal.
Designed for use in amplifier and generator stages in the range from long to short and ultrashort waves, as well as in pulse cascades of radio-electronic devices.
Main technical characteristics of the p416b transistor:
• The structure of the transistor: p-n-p
* RC max - constant collector power dissipation: 100 mW;
* RC t max-Constant dissipated collector power with heat sink: 360 mW;
* FGR-the Maximum frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: at least 80 MHz;
* Uqbo sample-collector-base Breakdown voltage at a given reverse current of the collector and open circuit of the emitter: 15 V;
* Uebo breakdown-Breakdown voltage of the emitter-base at a given reverse current of the emitter and the open circuit of the collector: 3 V;
* IC max - maximum permissible DC collector current: 25 mA;
* Icbo-Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter output: no more than 5 µa;
* h21e-Static current transfer coefficient of the transistor in the small signal mode for circuits with a common emitter: 50...200 Two hundred;
* SC-collector junction Capacity: no more than 8 pF;
* Rke us-saturation Resistance between collector and emitter: no more than 40 Ohms