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10x GT402E Germanium transistor. P-N-P. USSR
10x GT402E Germanium transistor. P-N-P. USSR

10x GT402E Germanium transistor. P-N-P. USSR

$ 8.97

Availability: 75 in stock
  • Country/Region of Manufacture: Russian Federation
  • Brand: USSR
  • Transistor Type: PNP BJT
  • All returns accepted: ReturnsNotAccepted
  • Model: GT402E
  • Condition: New
  • MPN: Does Not Apply

    Description

    1
    LOT - 10PCS
    A small amount is written in the customs Declaration
    After sending the lot the tracking number will be sent
    If you buy multiple lots or items from the store, the total delivery price is discussed with the seller !!!
    GT402E
    Transistors GT402E germanium alloy structures p-n-p amplifying.
    Designed for use in the output stages of low-frequency amplifiers.
    Characteristics of the GT402E transistor
    P-n-p structure
    Maximum permissible collector-emitter voltage (pulse) 25 V
    Maximum permissible DC (pulse) collector current 0.5 mA
    Maximum permissible constant power dissipation of the collector without heat sink (with heat sink) 0,6 W
    Static current transfer coefficient of a bipolar transistor in a circuit with a common emitter 60...150
    Reverse collector current 25 MCA
    The boundary frequency of the current transfer coefficient in a scheme with a common emitter is 1 MHz